收藏本站
N02L63W3A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
The N02L63W3A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor ’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L63W3A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40 o C to +85 o C and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Features
? Single Wide Power Supply Range
2.3 to 3.6 Volts
? Very low standby current
2.0μA at 3.0V (Typical)
? Very low operating current
2.0mA at 3.0V and 1μs (Typical)
? Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)
? Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
? Low voltage data retention
Vcc = 1.8V
? Very fas t output enable access time
30ns OE access time
? Automatic power down to standby mode
? TTL compatible three-state output driver
? Compact space saving BGA package avail-
able
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby Operating
Current (I SB ), Current (Icc),
Typical Typical
N02L63W3AB
48 - BGA
-40 o C to +85 o C 2.3V - 3.6V 70ns @ 2.3V
N02L63W3AT
N02L63W3AB2
44 - TSOP II
48 - BGA Green
55ns @ 2.7V
2 μ A
2 mA @ 1MHz
N02L63W3AT2
44 - TSOP II Green
?2008 SCILLC. All rights reserved.
July 2008 - Rev. 15
Publication Order Number:
N02L63W3A/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
N02L83W2AN25IT IC SRAM 2MBIT 3V LP 32-STSOP
N04L63W1AB27I IC SRAM 4MBIT 3V LP 48-BGA
N04L63W2AT27IT IC SRAM 4MBIT 3V LP 44-TSOP
N050-012 PANEL PATCH CAT5E WALL MT 12PORT
N052-012 PANEL PATCH CAT5E 568B 12PORT
N052-024 PANEL PATCH CAT5E 568B 24PORT
N052-048 PANEL PATCH CAT5E 48 PORT RACK
N08L6182AB27I IC SRAM 8MBIT 1.8V LP 48-BGA
相关代理商/技术参数
N02L63W3AT5I 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ?? 16bit
N02L63W3AT5IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit
N02L83W2A 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
N02L83W2AN25I 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AN25IT 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AN5I 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AN5IT 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AT25I 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray